Quantum Engineering Colloquium


1. Dr. Pengfei Sun,  TU Delft, The Netherlands -- 07-12-2016

2. Ir. Innocent Agbo, TU Delft, The Netherlands -- 07-12-2016


1.    Gate Control Circuits for Si Spin Qubits

It is a very promising way to implementation of confined single electron's spin state in a quantum dot to encode quantum information, which is so-called quantum dot spin qubit. By integration with CMOS transitro, it would enjoy the advantages of scalability and advanced electronics control. In this work, we are pursuing a innovation solution to integrate transistor by CMOS planar technology. Vertical junction less transistor architechture is also investigated, providing a suitable solution to address high-density large-scale qubit array.

 2.    Quantification of Sense Amplifier Offset Voltage Degradation due to Zero- and Run-time Variability

Nowadays, typical (memory) designers add design margins to compensate for uncertainties; however, this may be overestimated leading to yield loss, or underestimated leading to reduced reliability designs. Accurate quantification of all uncertainties is therefore critical to provide high quality and optimal designs. These uncertainties are caused by zero-time variability (due to process variability), and by run-time variability (due to environmental variabilities such as voltage and temperature, or due to temporal variability such as aging). This paper uses an accurate methodology to predict the impact of both zero- and run-time variability on the offset voltage of sense amplifiers while considering different workloads and PVT variations for a pre-defined failure rate. The results show a marginal impact of environmental run-time variability on the offset specification when considering zero-time variability only, while this becomes significant (up to 2X) when incorporating aging run-time variability. The results can be used to quantify whether the required offset voltage is met or not for the targeted lifetime; hence, enable the designer to take appropriate measures for an efficient and optimized design, depending on the targeted application lifetime.


Pengfei Sun received his PhD from Delft University of Technology in September 2016. His PhD work is focused on novel flexible single-photon avalanche diode image sensor technology. Before he started PhD, he also worked on thin-film transistor for display panel and micro-display electronics. Currently, he is working on quantum device integration on CMOS platform within QuTech as postdoc.

Innocent Agbo received the M.Sc. degree in computer engineering Laboratory of the Delft University of Technology, the Netherlands, where he is currently working towards the Ph.D degree in Electrical Engineering, Mathematics and Computer Science faculty. His research interest includes the reliability analysis, design, monitoring and mitigation of memory systems.


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